Imfrared Emitting Diode .950mm . GaAs
TO-18
Absolute Maximum Ratings
Tamb=25℃
unless otherwise specified
|
Parameter
|
Test condition
|
Symbol
|
Value
|
Unit
|
|
Reverse Voltage
|
|
VR
|
5
|
V
|
|
Forward current
|
Tcase?25℃
|
IF
|
250
|
MA
|
|
Peak Forward current
|
Tcase?25℃
|
IFM
|
500
|
MA
|
|
Surge Forward current
|
Tp?100us
|
IFSM
|
2.5
|
A
|
|
Power Dissipation
|
|
PV
|
170
|
MW
|
|
Tcase?25℃
|
PV
|
500
|
MW
|
|
Junction Temperature
|
|
TJ
|
100
|
℃
|
|
Storage Temperature Range
|
|
TSTG
|
-55 TO +100
|
℃
|
|
Thermal Resistance Junction/Ambient
|
|
RTHJA
|
450
|
K/W
|
|
Thermal Resistance Junction/Case
|
|
RTHJC
|
150
|
K/W
|