SILICON PNP EPITAXIAL TRANSISTOR
MAXIMUM RATINGS
Characteristic
Symbol
Rating
Unit
Collector-Base Voltage
VCBO
-180
V
Collector-Emitter Voltage
VCEO
-160
Emitter-Base Voltage
VEBO
-5
Collector Current(DC)
IC
-1.5
A
Collector Dissipation(Tc=25℃)
PC
1.0
W
Jumction Temperature
Tj
150
℃
Storage Temperature
TSTG
-55 TO +150