NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR
POWER AMPLIFIER APPLICATIONS
MAXIMUM
RATINGS
|
Characteristic
|
Symbol
|
Rating
|
Unit
|
|
Collector-Emitter Voltage
|
VCEO
|
120
|
V
|
|
Collector-Base Voltage
|
VCBO
|
120
|
V
|
|
Emitter-Base Voltage
|
VEBO
|
5
|
V
|
|
Collector Current-ontinuous
|
IC
|
8
|
A
|
|
Base Current
|
IB
|
0.8
|
A
|
|
Collector power dissipation
|
PC
|
80
|
W
|
|
Operating and Storage Junction
Temperature Range
|
TSTG
|
-55 TO +150
|
℃
|
PIN 1 BASE
2 COLLECTOR(HEAT SINK)
3 EMITTER