NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER
AMPLIFIERS AND MID-SPEED SWITCHING
MAXIMUM
RATINGS
Characteristic
|
Symbol
|
Rating
|
Unit
|
Collector-Emitter Voltage
|
VCEO
|
50
|
V
|
Collector-Base Voltage
|
VCBO
|
60
|
V
|
Emitter-Base Voltage
|
VEBO
|
6.0
|
V
|
Collector Current
|
IC
|
1.0
|
A
|
Collector power dissipation
|
PC
|
0.75
|
W
|
Storage Temperature
|
TSTG
|
-55 TO +150
|
℃
|
PIN 1:EMITTER
2:COLLECTOR
3:BASE