Silucon N-Channel MOS FET
Application
High speed power switching
Features
High breakdown voltage VDSS=1500V
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator DC-DC
convrter and motor driver
MAXIMUM
RATINGS
|
Characteristic
|
Symbol
|
Rating
|
Unit
|
|
Drain to source Voltage
|
VDSS
|
1500
|
V
|
|
Gate to source Voltage
|
VGSS
|
20
|
V
|
|
Drain current
|
ID
|
2.5
|
A
|
|
Drain peak current
|
ID(pulse)
|
7
|
A
|
|
Channel dissipation
|
PCh*2
|
100
|
mW
|
|
Storage Temperature
|
TSTG
|
-55 TO +125
|
℃
|