SILICON PNP EPITAXIAL TRANSISTOR
MAXIMUM
RATINGS
Characteristic
|
Symbol
|
Rating
|
Unit
|
Collector-Base Voltage
|
VCBO
|
-180
|
V
|
Collector-Emitter Voltage
|
VCEO
|
-160
|
V
|
Emitter-Base Voltage
|
VEBO
|
-5
|
V
|
Collector Current(DC)
|
IC
|
-1.5
|
A
|
Collector Dissipation(Tc=25℃)
|
PC
|
1.0
|
W
|
Jumction Temperature
|
Tj
|
150
|
℃
|
Storage Temperature
|
TSTG
|
-55 TO +150
|
℃
|