NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER
AMPLIFIERS AND MID-SPEED SWITCHING
 
MAXIMUM  
RATINGS
| 
 Characteristic 
 | 
 Symbol 
 | 
 Rating 
 | 
 Unit 
 | 
| 
 Collector-Emitter Voltage 
 | 
 VCEO 
 | 
 50 
 | 
 V 
 | 
| 
 Collector-Base Voltage 
 | 
 VCBO 
 | 
 60 
 | 
 V 
 | 
| 
 Emitter-Base Voltage 
 | 
 VEBO 
 | 
 6.0 
 | 
 V 
 | 
| 
 Collector Current          
 
 | 
 IC 
 | 
 1.0 
 | 
 A 
 | 
| 
 Collector power dissipation
 
 | 
 PC 
 | 
 0.75 
 | 
 W 
 | 
| 
 Storage Temperature
 
 | 
 TSTG 
 | 
 -55 TO +150 
 | 
 ℃ 
 | 
PIN 1:EMITTER
       2:COLLECTOR
       3:BASE